Field-effect passivation and degradation analyzed with photoconductance decay measurements

Abstract

In this article, an expression for the surface passivation has been derived in terms of the surface recombination velocity and the field-effect exponential. The analytical solutions provide a comprehensive understanding of the injection dependency of minority charge carrier lifetime as measured by photoconductance decay. The model has been utilized to analyze the field-effect passivation of silicon exerted by the fixed dielectric charge in an overlying dielectric film. Possible limitations and restrictions of the technique are also addressed. © 2014 AIP Publishing LLC.