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Erratum: Determination of band offsets at GaN/single-layer MoS2 heterojunction (Applied Physics Letters (2016) 109 (032104) DOI: 10.1063/1.4959254)

Applied Physics Letters
DOI: 10.1063/1.4961440
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Abstract

This article was originally published online on 20 July 2016. In the originally-published version the name of co-author Chien-Chih Tseng was spelled incorrectly. The authors' names and affiliations appear correctly above. All online versions of the article were corrected on 25 July 2016 and it appears correctly in print.

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Erratum: Determination of band offsets at GaN/single-layer MoS2 heterojunction (Applied Physics Letters (2016) 109 (032104) DOI: 10.1063/1.4959254). (2016, August 15). Applied Physics Letters. American Institute of Physics Inc. https://doi.org/10.1063/1.4961440

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