Abstract
The photoluminescence (PL) of the GaAs substrate excited by the electroluminescence of the active layer is adopted to determine the junction temperature in AlGaInP/GaAs light emitting diodes. Based on the Varshni equation for GaAs, the temperature measured by this approach is consistent with that obtained by the emission peak energy shift approach. As the PL signal is generated within the substrate, no calibration dependent on the device structure is necessary to determine the junction temperature of the device. © 2006 American Institute of Physics.
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CITATION STYLE
Chen, N. C., Wang, Y. N., Tseng, C. Y., & Yang, Y. K. (2006). Determination of junction temperature in AIGaInP/GaAs light emitting diodes by self-excited photoluminescence signal. Applied Physics Letters, 89(10). https://doi.org/10.1063/1.2345587
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