Gallium nitride technology for electric vehicles

Abstract

One-Third of total carbon footprint in the world is being caused by conventional combustion-based transportation system. To reduce these carbon footprints various renewable energy sources-based transportation mechanism is innovated with less maintenance cost. Electric vehicle is one of the most prominent among them which uses electricity and provides transportation. Various power conversion methods are used to convert energy from one another form to electrical energy. Various losses occur during the process which leads in CO2 emission and causes harm to the environment. Wide band gap GaN provides better efficient converters and chargers for electrical vehicles to make them more efficient and environment friendly. This paper gives a detailed discussion on GaN for EVs and relevant process for ion-implantation based discrete device. This paper reports on a discrete GaN depletion mode high electron mobility transistor (HEMT) with a breakdown voltage of 200V with a high isolation resistance of 2.89 ×1010 Ohms/sq. and a mobility of 1600 cm2/V.sec. for the of 48V DC-DC power converters employed in Electric vehicles (EVs).