Device and integration technologies for VLSI in post-Moore era

Abstract

We herein review the technology transition from thescaling-driven technical roadmap to the power-driven post-Moore roadmap,focusing on the primary trend in micro/nanoelectronics devices. Thenovel devices and process integration technologies in post-Moore era, suchas the FinFET, gate-all-around transistor, tunneling FET, and the sequential 3Dintegration process were systematically analyzed to provide newinsights into the everlasting evolution of VLSI technology.