Photoreflectance study of the surface Fermi level at (001) n - and p -type GaAs surfaces

X. Yin; H-M. Chen; F. H. Pollak; Y. Chan; P. A. Montano; P. D. Kirchner; G. D. Pettit; J. M. Woodall

Journal ArticleOPEN ACCESS

Photoreflectance study of the surface Fermi level at (001) n - and p -type GaAs surfaces

Yin X
Chen H
Pollak F
et al.

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films (1992) 10(1) 131-136

DOI: 10.1116/1.578125

102Citations

11Readers

Abstract

We report a photoreflectance study of Fermi level pinning (VF) on (001) n- and p-type GaAs with large, uniform electric fields. Surface photovoltage (Vs) effects were evaluated as a function of temperature (77 K

Cite

CITATION STYLE

APA

Yin, X., Chen, H.-M., Pollak, F. H., Chan, Y., Montano, P. A., Kirchner, P. D., … Woodall, J. M. (1992). Photoreflectance study of the surface Fermi level at (001) n - and p -type GaAs surfaces. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 10(1), 131–136. https://doi.org/10.1116/1.578125

Photoreflectance study of the surface Fermi level at (001) n - and p -type GaAs surfaces

Abstract

Cite

Register to see more suggestions