Characterization of Si and CVD SiC to Glass Anodic Bonding Using TEM and STEM Analysis

Abstract

Anodic bonding is a common process used in microelectromech. systems (MEMS) device fabrication and packaging. Polycryst. chem. vapor deposited (CVD) silicon carbide (SiC) is emerging as a new MEMS device and packaging material because of its excellent material properties including high strength, hardness, and thermal cond. A novel process recipe, requiring a SiC RMS surface roughness of 45 nm, was developed for anodically bonding CVD SiC to bulk Pyrex and Hoya SD-2 glass substrates. Transmission electron microscopy (TEM) and scanning transmission electron microscopy (STEM) and elemental anal. presented distinct differences in elemental depletion band(s) of bulk Pyrex and Hoya SD-2 glasses bonded to Si, and in interfacial bonding between Pyrex and CVD SiC compared to Pyrex and Si. This study indicates that magnesium in the Pyrex glass network also participates in the depletion layer process compared to previous studies where only potassium, calcium, aluminum, and sodium were identified. For the first time, this study identifies aluminum, magnesium, sodium, and zinc participating in the depletion layer process in Hoya SD-2 glass. [on SciFinder (R)]