Induced absorption in gadolinium gallium garnet irradiated by high energy235U ions

Abstract

The present work is devoted to investigation of optical absorption in pure Gd3Ga5O12 (GGG) single crystals in the spectral range 0.2-1.1 μm induced under influence of the U ions irradiation with energy 2640 MeV and a fluence 109-1011 cm-2. The induced absorption for 109 cm-2 is caused by recharging of point defects, both growth ones and impurities. After irradiation by 235U ions with fluences starting from 3 x 109 cm -2 the absorption rise is probably caused by contribution of the lattice destroying as a result of heavy ion bombardment as well as radiation displacement defects.