Fluorine Substituted Bithiophene Imide‐Based n‐Type Polymer Semiconductor for High‐Performance Organic Thin‐Film Transistors and All‐Polymer Solar Cells (Solar RRL 2∕2019)

Abstract

In article no. 1800265, Xugang Guo and co-workers introduce F atoms to the ?-position of bithiophene imide, generating a novel electron-deficient building block s-FBTI2, a well desired ?stronger acceptor? for n-type polymer semiconductors. The resulting semiconductor shows remarkable electron mobility, approaching 3.0 cm2 V?1 s?1 in organic thin-film transistors, and a promising power conversion efficiency of 6.50% in all-polymer solar cells.