Statistical analysis of excitonic transitions in single, free-standing GaN nanowires: Probing impurity incorporation in the poissonian limit

Abstract

Single, free-standing GaN nanowires grown by plasma-assisted molecular-beam epitaxy have been investigated with low temperature micro-photoluminescence. The quantitative analysis of the luminescence spectra of around 100 nanowires revealed that each nanowire exhibits its own individual spectrum. A significant fraction of nanowires exclusively emits at energies corresponding to either surface-donor-bound or free excitons, demonstrating that optical properties of individual nanowires are determined by a few impurity atoms alone. The number of impurities per nanowire and their location within the nanowires varies according to Poissonian statistics.[Figure not available: see fulltext.] © 2010 Tsinghua University Press and Springer-Verlag Berlin Heidelberg.