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Preparation of anodic porous alumina mask with ideally arranged holes on InP single crystals

Chemistry Letters (2005) 34(3) 342-343
DOI: 10.1246/cl.2005.342
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Abstract

Anodic porous alumina mask with ideally arranged holes was formed on InP single crystals. This process has advantageous in the achievement of nanofabrication with uniformity and reproducibility due to the mask being formed with sufficient adhesion on the InP. The masks formed by this process, was confirmed to applicable for the dry-process mask. Copyright © 2005 The Chemical Society of Japan.

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Yasui, K., Sakamoto, Y., Nishio, K., & Masuda, H. (2005). Preparation of anodic porous alumina mask with ideally arranged holes on InP single crystals. Chemistry Letters, 34(3), 342–343. https://doi.org/10.1246/cl.2005.342

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