A random-access-memory cell based on quantum flux parametron with three control lines

Abstract

In this study, we proposed a random-access memory (RAM) cell composed of adiabatic quantum-flux-parametron (AQFP) circuits as a component of large-scale AQFP RAMs. The memory cell is composed of a storage QFP gate and a readout AQFP gate, which is controlled by three control currents I d, I y and I x. I d is used to control an input datum. I y is a column selection current for the write operation. I x is a row selection current for both write and read operations. The control current margins evaluated in the simulation are larger than +/-30%. We designed the memory cell of the size of 50 μm × 40 μm by using AIST high-speed standard process, and verified the correctness of its operation by experiments. It was shown that the amplitude of the control currents is compatible with the output currents of AQFP logic.