Journal Article

High-efficiency non-resonant cavity light-emitting diodes

Electronics Letters (1998) 34(11) 1153-1155
DOI: 10.1049/el:19980810
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Abstract

860nm surface-textured thin-film GaAs light-emitting diodes have been fabricated with a novel design which includes a selectively oxidised AlGaAs layer for current confinement. The highest reported external quantum efficiencies for injection currents below 0.3mA are obtained. Furthermore. 20% external quantum efficiency for diodes with a current aperture of 12μm is reported.

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Windisch, R., Heremans, P., Dutta, B., Kuijk, M., Schoberth, S., Kiesel, P., … Borghs, G. (1998). High-efficiency non-resonant cavity light-emitting diodes. Electronics Letters, 34(11), 1153–1155. https://doi.org/10.1049/el:19980810

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