Mechanism analysis of IGBT turn-on process

Abstract

Based on the internal structure of IGBT, the characteristics of gate voltage, collector current and collector-emitter voltage of IGBT during its turn-on process are studied in this paper. The relationship between gate voltage and gate capacitance is given, and the rising process of gate voltage is described in detail. According to the characteristics of IGBT turn-on current, a quadratic function is proposed to fit the collector current waveform. The influence of the main circuit stray inductance on collector-emitter voltage waveform is also analyzed. Finally, the IGBT dynamic switch characteristic test platform is built, and the measurement results verify the correctness of the analysis.