Low-insertion loss pin diode switches using impedance-transformation networks

Abstract

Two SPDT switches that have low insertion loss with impedance-transformation networks are presented. The proposed SPDT switches are comprised of two shunt PIN s and two quarter- wavelength microstrip lines together with impedance transformation networks, which canceled the capacitance effect at off-state and the inductance effect at on-state simultaneously. The simulated insertion loss performance is less than 0.3 dB and the fabricated ones exhibit on-state low insertion loss of 0.5 dB within the range of 4.6-4.8 GHz.