Abstract
The recent results of C. B. Vining, W. Laskow, J. O. Hanson, R. R. Van der Beck, and P. D. Gorsuch [J. Appl. Phys. 69, 4333 (1991)] regarding the effect of grain size on the thermoelectric figure of merit of heavily doped p-type silicon germanium alloys are compared to earlier results on similar materials. The data confirm that the room-temperature figure-of-merit is significantly increased in materials with a small grain size.
Cite
CITATION STYLE
Rowe, D. M., Fu, L. W., & Williams, S. G. K. (1993). Comments on the thermoelectric properties of pressure-sintered Si 0.8Ge0.2 thermoelectric alloys. Journal of Applied Physics. https://doi.org/10.1063/1.352764
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