Micromachined submicrometer photodiode for scanning probe microscopy

Abstract

A submicrometer photodiode probe with a sub-50 nanometer tip radius has been developed for optical surface characterization on a nanometer scale. The nanoprobe is built to detect subwavelength optical intensity variations in the near field of an illuminated surface. The probe consists of an Al-Si Schottky diode constructed near the end of a micromachined pyramidal silicon tip. The process for batch fabrication of the nanoprobes is described. Electrical and optical characterization measurements of the nanoprobe are presented. The diode has a submicrometer optically sensitive area with a 150 fW sensitivity.© 1995 American Institute of Physics.