Red Electroluminescence from Light Emitting Diodes Based on Eu-Doped ZnO Embedded in p-GaN/Al 2 O 3 /n-ZnO Heterostructures

Abstract

Heterojunction p-GaN/n-ZnO light emitting diode (LED) structure using Eu-doped ZnO (ZnO:Eu) as an active component is demonstrated in order to realize low-cost and environmentally-friendly red LEDs with sharp linewidth and temperature stability against surrounding environment including operating temperature and injection current. Chemically stable Al 2 O 3 is inserted as an electron blocking layer between p-GaN and ZnO:Eu/n-ZnO in order to facilitate the injection of carriers into the ZnO:Eu active layer. Al 2 O 3 insertion with a moderate thickness (∼10 nm) facilitates the carrier recombination at the ZnO layer with comparatively low resistivity. Device characteristics of the p-GaN/Al 2 O 3 /ZnO:Eu/n-ZnO LED structures show red luminescence under current injection with reversed bias voltage originated from Eu 3+ ions in the ZnO host. Detailed optical characteristics of the ZnO:Eu layer in the LED structures utilizing the combined excitation emission spectroscopy measurement enable the identification of the luminescence centers contributing to Eu luminescence under both indirect excitation and collisional excitation. The luminescence center contributing to Eu luminescence under indirect excitation via the ZnO host is different from that under collisional excitation, which would pave the way to understand the Eu luminescence mechanism in ZnO:Eu, and hence realize high-brightness LED structures based on rare-Earth doped ZnO as an active component.