Planar p-on-n HgCdTe heterostructure infrared photodiodes on Si substrates by molecular beam epitaxy

Abstract

We have developed a low temperature procedure for molecular beam epitaxy of CdTe buffer layers on {211} Si wafers and have used Si/ZnTe/CdTe composite substrates for molecular beam epitaxy of double layer Hg1-xCdxTe heterostructures. Planar p-on-n double layer heterostructures were formed by an implantation technique and test diodes were fabricated and characterized. At 77 K, devices with 30×30 μm2 junction area had R0A values in the range 1.5×106-1×107Ωcm2 with a uniform cut-off wavelength of 4.65 μm. © 1997 American Institute of Physics.