Microwave operation of sub-Micrometer gate surface channel MESFETs in polycrystalline diamond

Abstract

Submicron gate-length metal semiconductor field effect transistors (MESFETs) were fabricated on hydrogen-terminated-large grain polycrystalline diamond. Devices showed high drain-source current (140 ma/mm) and large transconductance values (50 ms/mm), with a cut-off frequency f t = 10 GHz and a maximum oscillation frequency, f max, up to 35 GHz. These values are obtained through the fabrication of devices with geometry and active region dimensions (200-500 nm gate length) compatible with available microelectronic technologies. © 2009 Wiley Periodicals, Inc.