Temperature-dependent Raman studies and thermal conductivity of few-layer MoS2

Abstract

We report on the temperature dependence of in-plane E2g and out-of-plane A1g Raman modes in high-quality few-layer MoS 2 (FLMS) prepared using a high-temperature vapor-phase method. The materials obtained were investigated using transmission electron microscopy. The frequencies of these two phonon modes were found to vary linearly with temperature. The first-order temperature coefficients for E12g and A1g modes were found to be (1.32 and 1.23) × 10-2 cm-1/K, respectively. The thermal conductivity of the suspended FLMS at room temperature was estimated to be ∼52 W/mK. © 2013 American Chemical Society.