Abstract
Extremely narrow photoluminescence linewidths have been observed from 6-Å quantum wells of GaAs/In0.11Ga0.89As/GaAs. The quality of these spectra is such that structure involving higher-order donor-exciton transitions are observed.
Cite
CITATION STYLE
APA
Kirby, P. B., Constable, J. A., & Smith, R. S. (1991). Donor bound-exciton structure observed by photoluminescence in very thin GaAs/In0.11Ga0.89As/GaAs single quantum wells. Journal of Applied Physics, 69(1), 517–518. https://doi.org/10.1063/1.347697
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