Domain-modified engineering for low-power resistive switching in ferroelectric diodes

Abstract

Neuromorphic devices based on ferroelectric resistive switching (RS) effects are promising to simulate the information recognition and memory of the human brain. However, the high power of RS elements in crossbar arrays is still an issue, limiting the neuromorphic applications. Here, we propose a domain-modified engineering for low-power RS in ferroelectric diodes by locally introducing relaxor ferroelectric units to lower domain switching barriers. A low-power RS of ∼ 70 μW, with large OFF/ON resistance ratio and high endurance, is achieved in Au/0.8BaTiO3-0.1Ba0.7Sr0.3TiO3-0.1BaTi0.7Zr0.3O3/Pt diodes, which is about 48.5% lower than that in Au/BaTiO3/Pt diodes. The interaction between macrodomains is depressed by domain modification engineering, lowering domain switching barriers, thereby operating voltage and power are significantly modulated. Meanwhile, good nonvolatility is obtained since the remanent polarization is partially maintained by the initial macrodomains and its decrease is slowed down by the relaxor units. This work provides a strategy to lower RS power by domain modification engineering for developing memristors and neuromorphic computing devices.