Abstract
Rare-earth doped nitride attracts considerable attention because of its application as a light-emitting phosphor. The atomic site of dopants in a crystal is important for the development of advanced materials. Here, we directly observe a single Eu dopant atom in phosphor Β-SiAlON using scanning transmission electron microscopy (STEM). A STEM annular dark-field image reveals that a Eu dopant exists in a continuous atomic channel in a Β -Si3 N4 structure. The image contrast of the single Eu dopant is confirmed based on the comparison of experimental and simulation results. © 2009 American Institute of Physics.
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CITATION STYLE
Kimoto, K., Xie, R. J., Matsui, Y., Ishizuka, K., & Hirosaki, N. (2009). Direct observation of single dopant atom in light-emitting phosphor of Β-SiAlON: Eu2+. Applied Physics Letters, 94(4). https://doi.org/10.1063/1.3076110
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