Temperature dependence of GaN HEMT small signal parameters

Abstract

This study presents the temperature dependence of small signal parameters of GaN/SiC HEMTs across the 0150C range. The changes with temperature for transconductance (g m), output impedance (C ds and R ds), feedback capacitance (C dg), input capacitance (C gs), and gate resistance (R g) are measured. The variations with temperature are established for g m, C ds, R ds, C dg, C gs, and R g in the GaN technology. This information is useful for MMIC designs. © 2011 Ali M. Darwish et al.