Oxide-confined 850 nm VCSELs operating at bit rates up to 40 Gbit/s

S. A. Blokhin; J. A. Lott; A. Mutig; G. Fiol; N. N. Ledentsov; M. V. Maximov; A. M. Nadtochiy; V. A. Shchukin; D. Bimberg

Journal Article

Oxide-confined 850 nm VCSELs operating at bit rates up to 40 Gbit/s

Electronics Letters (2009) 45(10) 501-503

DOI: 10.1049/el.2009.0552

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Abstract

Oxide-confined 850 nm vertical-cavity surface-emitting lasers operating at 40 Gbit/s at current densities ∼10 kA/cm 2 are realised. The deconvoluted rise time of the device is below 10 ps and remains hardly temperature sensitive up to 100°C. © The Institution of Engineering and Technology 2009.

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Blokhin, S. A., Lott, J. A., Mutig, A., Fiol, G., Ledentsov, N. N., Maximov, M. V., … Bimberg, D. (2009). Oxide-confined 850 nm VCSELs operating at bit rates up to 40 Gbit/s. Electronics Letters, 45(10), 501–503. https://doi.org/10.1049/el.2009.0552

Oxide-confined 850 nm VCSELs operating at bit rates up to 40 Gbit/s

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