Abstract
Solar-blind photodetectors are designed from individual In 2Ge2O7 nanobelts using a standard photolithography technique. The detectors demonstrated high sensitivity and selectivity towards the solar-blind spectrum, fast response and decay times ∼ 3 ms, high responsivity ∼ 3.9 × 105 A W-1, and high quantum efficiency ∼2.0 × 108%. Copyright © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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Li, L., Lee, P. S., Yan, C., Zhai, T., Fang, X., Liao, M., … Golberg, D. (2010). Ultrahigh-performance solar-blind photodetectors based on individual single-crystalline In2Ge2O7 nanobelts. Advanced Materials, 22(45), 5145–5149. https://doi.org/10.1002/adma.201002608
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