Benchmarking the performance of ultrathin body InAs-on-insulator transistors as a function of body thickness

Abstract

The effect of body thickness (5-13 nm) on the leakage currents of top-gated, InAs-on-insulator field-effect-transistors with a channel length of ∼200 nm is explored. From a combination of experiments and simulation, it is found that the OFF-state currents are primarily dominated by Shockley Read Hall recombination/generation and trap-assisted tunneling. The OFF currents are shown to decrease with thickness reduction, highlighting the importance of the ultrathin body device configuration. The devices exhibit promising performances, with a peak extrinsic and intrinsic transconductances of ∼1.7 and 2.3 mS/μm, respectively, at a low source/drain voltage of 0.5 V and a body thickness of ∼13 nm. © 2011 American Institute of Physics.