High-resolution two-dimensional dopant characterization using secondary ion mass spectrometry

Abstract

A quantitative two-dimensional (2D) boron dopant profiling for submicron technology has been demonstrated using secondary ion mass spectrometry (SIMS). A novel test structure incorporating a moiré pattern has been developed to improve SIMS lateral resolution. This approach significantly simplifies 2D SIMS test chip manufacturing, data acquisition, and analysis. As a result, 2D dopant profiling with a lateral resolution limited by the photomask pixel size (10 nm) and sensitivity of 3×1017 cm−3 has been realized on commercial equipment. 2D dopant profiles are reproducible within 10 nm. The measured profiles were compared with 2D Monte-Carlo and calibrated TSUPREM4 simulations and showed good agreement.