Nanoplasmonic optical switch based on Ga-Si 3 N 4 -Ga waveguide

Abstract

In this paper, we propose an optical switch based on a metal-insulator- metal plasmonic waveguide with Si 3 N 4 core sandwiched between two gallium (Ga) metal layers. Combining the unique structural phase transition property of gallium, within a total length of only 400 nm, an extinction ratio as high as 7.68 dB can be achieved in the proposed nanoplasmonic structure. The phase transition may be achieved by changing the temperature of the waveguide or by external light excitation. © 2011 Society of Photo-Optical Instrumentation Engineers (SPIE).