An electrostatic gate for mechanically controlled single-molecule junctions

Abstract

We present a fabrication scheme for a tunable single-molecule transistor that allows for controlling the electrode separation and provides an electrostatic gate. The experimental approach is based on the mechanically controlled break junction technique but integrates an additional bottom gate electrode and an uninterrupted high-κ gate dielectric. The device performance is demonstrated for a single-molecule junction showing Coulomb blockade characteristics. © IOP Publishing and Deutsche Physikalische Gesellschaft.