Electrically Active Defects in 3C, 4H, and 6H Silicon Carbide Polytypes: A Review

Abstract

This paper aims to critically review electrically active defects studied by junction spectroscopy techniques (deep-level transient spectroscopy and minority carrier transient spectroscopy) in the three most commonly used silicon carbide (SiC) polytypes: 3C-SiC, 4H-SiC, and 6H-SiC. Given the dominant role of SiC in power electronic devices, the focus is strictly on electrically active defects that influence material performance and device reliability. The most prevalent defects in each polytype and their effects on electrical properties will be examined. Additionally, recent advancements in defect characterization and defect engineering will be highlighted, emphasizing their impact on improving SiC-based device performance. The paper will also address the main challenges that continue to hinder the broader adoption of SiC, such as defect-related limitations in carrier lifetime and doping efficiency. Furthermore, beyond the well-established applications of SiC in power electronics and high-temperature environments, lesser-known niche applications will be explored, showcasing the material’s versatility in emerging fields.