Physical-gap-channel graphene field effect transistor with high on/off current ratio for digital logic applications

Abstract

We propose and analyze an approach to secure a high on/off current ratio in a graphene field effect transistor (FET) by introducing a physical gap along the channel rather than by attempting to open the energy bandgap of graphene. The device simulation results of the newly proposed device structure reveal highly suppressed off-state current of ∼10 -9 A/μm, an on/off current ratio of more than seven orders of magnitude, and a subthreshold slope of 2.23 mV/decade more than a 20-fold reduction relative to the theoretical limitation of conventional metal-oxide-semiconductor FETs. © 2012 American Institute of Physics.