Nanometer-scale oxidation of Silicon surface by ICP plasma

Abstract

An experimental study of growth kinetic of silicon oxide during the initial stage of plasma enhanced oxidation is performed. Measurements were done in situ by means of spectroscopic ellipsometry with time resolution of 1 s. It was shown that oxidation of silicon in plasma does not comply with Deal-Grove model of oxidation. Measurements of concentration of oxygen in plasma and ion flux were performed to define mechanisms of oxidation. Obtained results could be applied for the development of multistage plasma processes involved in formation of nanostructures in advanced processes like atomic layer etching (ALE) and area selective atomic layer deposition.