Self-Healing of Proton-Irradiated Organic Photodiodes and Photovoltaics

Abstract

In this study, a comprehensive quantitative analysis of the photodiode (PD) is conducted and photovoltaic (PV) characteristics of organic non-fullerene PCE10:ITIC-4F devices before and after exposure to a 150 ns pulse of 170 keV proton irradiation with the fluence of 2·1012 p cm−2 that is equivalent to ≈6 years of operation at a low Earth orbit. While an expected initial performance reduction happened in the photodiode and photovoltaic operation modes, a hitherto unknown self-healing effect in the organic devices is observed several days after the proton irradiation. The organic bulk-heterojunction (BHJ) material properties and the multi-mechanisms recombination processes before and after irradiation and during self-healing are investigated. This analysis provides a quantitative understanding of the changes occurring in the device physics and points toward the relevant aspects of the self-healing mechanism related to the dynamics of proton-induced traps in the bulk of the organic active layer. Ultimately, the synergy of record lightweight features and newly discovered self-healing of proton-induced damage in organic PDs and solar cells highlights their great potential for applications in rapidly emerging space technology.