Electron band alignment at the interface of (100)GaSb with molecular-beam deposited Al2 O3

Abstract

From internal photoemission and photoconductivity measurements at the (100) GaSb/Al2 O3 interface, the semiconductor valence band is found to be 3.05±0.10 eV below the oxide conduction band. This band alignment corresponds to conduction and valence band offsets of 2.3±0.10 and 3.05±0.15 eV, respectively. These results indicate that the valence band in GaSb lies energetically well above the valence band in Inx Ga1-x As (0≤x0≤0.53) or InP, suggesting the possibility of fabrication of hole quantum-well channel structures. © 2011 American Institute of Physics.