Interface trap generation in silicon dioxide when electrons are captured by trapped holes

Abstract

A characteristic interface trap was observed in a hole trapping experiment when electrons were captured by trapped holes injected by an avalanche in the silicon. The observations could be explained by the generation of new electronic states through relaxation of strained bonds which were proposed to be the origin of hole traps. The result is either a weak bond in the network or two dangling bonds with no net charge. The weak bond or dangling bonds give rise to neutral traps in the bulk and interface traps at the interface of the oxide. The presence of interface traps for such defects at the interface is predicted by theoretical calculations.