Abstract
Wet chemical etching methods were utilized to conduct Si surface texturing, which could enhance photoelectrochemical hydrogen generation rate. Two different etching methods tested, which were anisotropic metal-catalyzed electroless etching and isotropic etching. The Si nano-texture that was fabricated by the anisotropic etching showed ~25% increase in photo-current for H2 generation. The photocurrent enhancement was attributed to the reduced reflec-tion loss at the nano-textured Si surface, which provided a layer of intermediate density between water and the Si substrate.
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CITATION STYLE
Oh, I.-W. (2011). Photoelectrochemical Hydrogen Production on Textured Silicon Photocathode. Journal of the Korean Electrochemical Society, 14(4), 191–195. https://doi.org/10.5229/jkes.2011.14.4.191
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