Promotion of [001]-oriented L10-FePt by rapid thermal annealing with light absorption layer

Abstract

Highly [001]-oriented L10-FePt grown on SiO2∥Si is achieved by using rapid thermal annealing (RTA) at 400 °C. Due to the dramatic divergence of light absorption ability between Si and FePt films, Si behaves as the light absorption layer to absorb more light emitted from RTA system, which gives rise to larger thermal expansion on Si and induces in-plane tensile stress on FePt films. By raising heating rate during RTA, the transient light intensity is increased; therefore, higher in-plane tensile stress on FePt films is generated, which effectively suppresses the opening-up of in-plane hysteresis loops. © 2012 American Institute of Physics.