Evidence from scanning tunneling microscopy in support of a structural model for the InSb(001 )-c(8 × 2) surface

Abstract

In this letter we present evidence from scanning tunneling microscopy studies in support of a recently proposed structural model for the indium-terminated c(8 × 2) surface of InSb(001). This structural model, by Norris and co-workers, is based on a surface x-ray diffraction study [Surf. Sci. 409, 27 (1998)], and represents a significant departure from previously suggested models for the c(8 × 2) reconstruction on any (001) surface of the common III-V semiconductor materials. Although filled state images of the InSb(001)-c(8 × 2) surface have previously been published, empty states image of sufficient quality to extract any meaningful information have not previously been reported. The observations are in excellent agreement with the recently proposed model for this surface reconstruction. © 1999 American Institute of Physics.