Gate-Controlled WSe2 Transistors Using a Buried Triple-Gate Structure

Abstract

In the present paper, we show tungsten diselenide (WSe2) devices that can be tuned to operate as n-type and p-type field-effect transistors (FETs) as well as band-to-band tunnel transistors on the same flake. Source, channel, and drain areas of the WSe2 flake are adjusted, using buried triple-gate substrates with three independently controllable gates. The device characteristics found in the tunnel transistor configuration are determined by the particular geometry of the buried triple-gate structure, consistent with a simple estimation of the expected off-state behavior.