Fabrication and characterization of perovskite-based CH3NH3Pb1-xGexI3, CH3NH3Pb1-xTlxI3 and CH3NH3Pb1-xInxI3 photovoltaic devices

Abstract

Perovskite-type CH3NH3PbI3-based photovoltaic devices were fabricated and characterized. Doping effects of thallium (Tl), indium (In), or germanium (Ge) element on the photovoltaic properties and surface structures of the perovskite phase were investigated. The open circuit voltage increased by Ge addition, and fill factors were improved by adding a small amount of Ge, Tl or In. In addition, the wavelength range of incident photon conversion efficiencies was expanded by the Tl addition.