Optical transitions of InAs/GaAs quantum dot under annealing process

Abstract

A numerical method has been used for the determination of the confined eigenstates and their corresponding optical transitions in an interdiffused InAs/GaAs single quantum dot (QD). Annealing process has found to result in the change of the QD composition, morphology and hence the potential profiles. Compared with the as-grown QD, calculations presented here show blueshifter and nearer optical transition energies for the excitons in the interdiffused one. We find also that QDs retain their zero-dimensional density of states after the diffusion of the potential. The results are compared with experimental data. © 2012 American Institute of Physics.