Band structure engineering of chemically tunable LnSbTe (Ln = La, Ce, Pr)

Abstract

The ZrSiS family of compounds has garnered interest as Dirac nodal-line semimetals and offers an approach to study structural motifs coupled with electronic features, such as Dirac crossings. CeSbTe, of the ZrSiS/PbFCl structure type, is of interest due to its magnetically tunable topological states. The crystal structure consists of rare earth capped square nets separating the magnetic Ce-Te layers. In this work, we report the single crystal growth, magnetic properties, and electronic structures of LnSb1-xBixTe (Ln = La, Ce, Pr; x ∼0.2) and CeBiTe, adopting the CeSbTe crystal structure, and the implication of tuning the electronic properties by chemical substitution.