Selectively formed GaAs quantum nanostructures and their application to single electron integrated circuits

Abstract

We propose and fabricate a 1-bit adder circuit having only two single electron transistors (SETs) for AND and XOR logic operations by using SA-MOVPE. Two SETs have two common input gates and different Coulomb oscillation periods. The logic operation can be achieved on the basis of a binary decision diagram (BDD) architecture using Coulomb blockade (CB) in GaAs dots. We also demonstrate Coulomb oscillations caused by input gate voltages for a SET. Oscillation features of two input gates are the same and their phases can be shifted by the control gate. © 2006 The Surface Science Society of Japan.