Correlation between the lasing characteristics and the transient induced absorption in InGaN based UV laser diodes

Abstract

With performing time-resolved transmission measurements in InGaN based laser diode structure, we find that the negative transient transmission is closely related with defect states, showing correlated behaviors with device performance. Our probing method may be used to noninvasively characterize defect density and expected device performance of InGaN materials. © 2011 American Institute of Physics.