Polarization-driven high Rabi frequency of piezotronic valley transistors

Abstract

The properties of spin and valley transport of piezotronics valley transistor is studied based on a normal/ferromagnetic/normal (NFN) structure of monolayer (ML) transition metal dichalcogenides (TMDs). Rabi frequency reach up to 4200 MHz based on piezotronics effect, which is about 1000 times higher than that of ZnO/CdO quantum well devices. Strain-induced strong polarization can control properties of spin and valley transport in piezo-phototronic transistor. The strong polarization can be applied on the modulation of the valley qubit. The spin and valley conductance and the spin and valley polarizability are calculated theoretically. The strong polarization can be applied on the manipulation of valley qubit, which paves a new way to quantum computing applications based on piezotronic valley transistors.