Abstract
We develop a simple method for measuring the electron spin relaxation times T1, T2 and T2∗ in semiconductors and demonstrate its exemplary application to n-type GaAs. Using an abrupt variation of the magnetic field acting on electron spins, we detect the spin evolution by measuring the Faraday rotation of a short laser pulse. Depending on the magnetic field orientation, this allows us to measure either the longitudinal spin relaxation time T1 or the inhomogeneous transverse spin dephasing time T2∗. In order to determine the homogeneous spin coherence time T2, we apply a pulse of an oscillating radiofrequency (rf) field resonant with the Larmor frequency and detect the subsequent decay of the spin precession. The amplitude of the rf-driven spin precession is significantly enhanced upon additional optical pumping along the magnetic field.
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CITATION STYLE
Belykh, V. V., Yakovlev, D. R., & Bayer, M. (2020). Optical detection of electron spin dynamics driven by fast variations of a magnetic field: a simple method to measure T1 , T2 , and T2∗ in semiconductors. Scientific Reports, 10(1). https://doi.org/10.1038/s41598-020-70036-8
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