Abstract
We demonstrated heteroepitaxial growth of perovskite CaTaO2N on SrTiO3 (100) substrates by using nitrogen plasma assisted pulsed laser deposition (NPA-PLD). The CaTaO2N films grew coherently on SrTiO3 substrates, showing a layer-by-layer growth mode in the initial stages. The obtained films possessed high crystallinity, a sharp film/substrate interface, and flat surfaces. Impedance measurements revealed that CaTaO2N has a much smaller dielectric constant than those of SrTaO2N or BaTaO2N. These results indicate that heteroepitaxial growth by NPA-PLD is a promising approach for preparing high-quality perovskite oxynitride single crystals, which are desirable for investigation of electrical properties of perovskite oxynitrides. © 2013 American Chemical Society.
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CITATION STYLE
Oka, D., Hirose, Y., Fukumura, T., & Hasegawa, T. (2014). Heteroepitaxial growth of perovskite CaTaO2N thin films by nitrogen plasma-assisted pulsed laser deposition. Crystal Growth and Design, 14(1), 87–90. https://doi.org/10.1021/cg401176j
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