Abstract
High-speed metal-semiconductor-metal (MSM) photodetectors based on Schottky-contacted core/shell GaAs/AlGaAs and bare GaAs nanowires were fabricated and characterized. The measured core/shell temporal response has a ∼10 ps full-width at half-maximum and an estimated corrected value less than 5 ps. The bare GaAs devices exhibit a slower response (∼35 ps) along with a slow decaying persistent photocurrent (∼80 s). The core/shell devices exhibit significantly improved dc and high-speed performance over bare nanowires and comparable performance to planar MSM photodetectors. The picosecond temporal response, coupled with picoampere dark current, demonstrate the potential for core/shell nanowires in high-speed imaging arrays and on-chip optical interconnects. © 2011 American Institute of Physics.
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CITATION STYLE
Gallo, E. M., Chen, G., Currie, M., McGuckin, T., Prete, P., Lovergine, N., … Spanier, J. E. (2011). Picosecond response times in GaAs/AlGaAs core/shell nanowire-based photodetectors. Applied Physics Letters, 98(24). https://doi.org/10.1063/1.3600061
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